Intellectual Property 1 페이지

Title	Authority (Country of filing)	Application Number	Application Date	Registration Number	Registration Date	Technology Field	Current status
CONNETED BODY WITH SEMICONDUCTOR LIGHT EMITTING REGIONS	Domestic	10-2011-0074191	2011-07-26	10-1303168	2013-08-28	LED	Registered
SEMICONDUCTOR LIGHT EMITTING DEVICE	Domestic	10-2011-0129439	2011-12-06	10-1321002	2013-10-16	LED	Registered
SEMICONDUCTOR ULTAVIOLET LIGHT EMIMITTING DEVICE	Domestic	10-2012-0026212	2012-03-14	10-1372500	2014-03-04	LED	Registered
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME	Domestic	10-2012-0063674	2012-06-14	10-1303150	2013-08-28	LED	Registered
SEMICONDUCTOR LIGHT EMITTING DEVICE	Domestic	10-2012-0081788	2012-07-26	10-1928328	2018-12-06	LED	Registered
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME	Domestic	10-2016-0119236	2016-09-19	10-1764129	2017-07-27	LED	Registered
COMPOUND SEMICONDUCTOR OPTICAL DEVICE	Domestic	10-2016-0166737	2016-12-08	10-1895234	2018-08-30	LED	Registered
COMPOUND SEMICONDUCTOR OPTICAL DEVICE	Domestic	10-2016-0166740	2016-12-08	10-1928322	2018-12-06	LED	Registered
TEMPLATE FOR GROWING III-NITRIDE SEMICONDUCTOR LAYER, III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAMES	Domestic	10-2017-0136503	2017-10-20	10-2405836	2022-05-31	LED	Registered
COMPOUND SEMICONDUCTOR OPTICAL DEVICE	Domestic	10-2018-0030003	2018-03-15	10-2437209	2022-08-24	LED	Registered
METHOD OF MANUFACTURING SUPPORTING SUBSTRATE FOR SEMICONDUCTOR LIGHT EMITTIN DEVICE	Domestic	10-2018-0062279	2018-05-31	10-2387087	2022-04-12	LED	Registered
SEMICONDUCTOR LIGHT EMITTING DEVICE	Domestic	10-2018-0170282	2018-12-27	10-2227215	2021-03-08	LED	Registered
SEMICONDUCTOR LIGHT EMITTING DEVICE	Domestic	10-2019-0008109	2019-01-22	10-2275360	2021-07-05	LED	Registered
Method of manufacturing AlxGa1-xN (0.5≤x≤1) piezoelectric thin films with high crystallinity and their apparatus using the thin film	Domestic	10-2019-0023998	2019-02-28	10-2301861	2021-09-08	Power Semiconductor / RF	Registered
Method of manufacturing AlxGa1-xN (0.5≤x≤1) piezoelectric thin films with high crystallinity and their apparatus using the thin film	Domestic	10-2019-0033781	2019-03-25	10-2315908	2021-10-15	Power Semiconductor / RF	Registered