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GaN Epitaxial Wafers

Epitaxial wafer offerings for power semiconductors and microLED displays
- Growth substrate : Sapphire, SiC, Si
- Size : 4 inch, 6 inch, 8 inch

GaN Power Epitaxy Wafer
Model	Material	Substrate	inch	Remark
RF	GaN	SiC	4 inch, 6 inch	C-doped GaN buffer (HR-GaN)
	GaN	SiC	4 inch, 6 inch	WLBF^TM (Buffer-Free Thin GaN)
	GaN, AIN	SiC	4 inch, 6 inch	WLAB^TM (Thick AIN Buffer)
Power	GaN	Si	4 inch, 6 inch, 8 inch	Middle/High Power HEMT
	GaN	Sapphire	4 inch, 6 inch, 8 inch	Middle/High Power HEMT
	GaN, AIN	Sapphire	4 inch	WLAB^TM (Thick AIN Buffer)

Epitaxial wafers for LEDs
Model	Wavelength	Substrate	inch	Application
Blue LED	440~470nm	Si, Sapphire	4 inch, 6 inch	microLED Display, BLU, Lightings
Green LED	510~540nm	Si, Sapphire	4 inch, 6 inch	microLED Display
UVC LED	270~280nm	Sapphire	4 inch	Sterilizer

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