PRODUCT
Epitaxy film disposition | Wafer cleaning | Wafer chemical treatment | Photolithography | Deposition process | Heat treatment | Etching | Post-processing | Measurement | Analysis |
---|---|---|---|---|---|---|---|---|---|
GaN-on-Sapphire | Organic cleaning | Acid process (Acidification) | PR coating | SiO₂(PECVD) | RTA | GaN | Grinding | Probe | PL |
GaN-on-Si | Acid cleaning | Base process | Exposure | ITO(RPO) | SiO₂ | Lapping | Sort | XRD | |
GaN-on-SiC | Organic treatment | Development | Metal(E-beam) | Poliching | SEM | ||||
AFM | |||||||||
a-step |
ID | Model | Capacity | Application |
---|---|---|---|
MOCVD#1 | Veeco | 14x4 inch, 5x6 inch, 3x8 inch | GaN Based LED, Power device |
MOCVD#2 | Veeco | 14x4 inch, 5x6 inch, 3x8 inch | GaN Based LED, Power device |
MOCVD#3 | Aixtron | 5x4 inch | GaN/AIN Based LED, Power device (Max Temp. 1400℃) |
MOCVD#4 | Aixtron | 5x8 inch | GaN Based LED, Power device |
PL | 4 inch, 6 inch, 8 inch | ||
XRD | 4 inch, 6 inch, 8 inch | ||
AFM | 4 inch |
Machine | Wafer Size | Note |
---|---|---|
Wet Station (Acids) | 4 inch | H₂SO₄, H₂O₂, HNO₃, HCl, BOE |
Auto Wet Station (Organics) | 4 inch | Acetone, IPA, PR stripper |
Spin Dryer#1,2,3 | 4 inch | |
Track#1,2 | 4 inch | PR Coating (Positive, Negative) |
Track#3 | 4 inch | PR Develop |
Stepper | 4 inch | Expose |
Aligner | 4 inch | Expose |
PECVD#1,2 | 4 inch | SiO₂ Deposition |
O₂ Asher | 4 inch | |
ICP-RIE #1,2,3 | 2 inch, 4 inch, 6 inch, 8 inch | GaN, SiO₂ Dry Etch |
RPD | 2 inch, 4 inch, 6 inch, 8 inch | ITO Deposition |
E-beam#1,2,3 | 2 inch, 4 inch, 6 inch, 8 inch | Cr, Ni, Ti, Al, Au, AuSn, SAC Deposition |
RTA#1,2,3 | 4 inch | 300~700℃ Anneal |
Grinder Machine | 4 inch | |
Lapping Machine | 4 inch | |
Polishing Machine | 4 inch | |
Wafer Breaker#1,2 | 4 inch | |
Laser scriber#1,2 | 4 inch | |
Wafer Prober#1,2 | 4 inch | |
Chip Prober#1,2 | 4 inch | |
Chip Soter#1,2 | 4 inch | |
SEM | - | |
Alpha Step | 2 inch, 4 inch, 6 inch, 8 inch | |
Filmetrics | 2 inch, 4 inch, 6 inch, 8 inch |
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