Countries around the world—including the U.S., China, Japan, and Europe—are racing to develop next-generation semiconductor technologies such as gallium nitride (GaN) and silicon carbide (SiC), recognizing that these semiconductors are directly tied to future national security.

After experiencing a global semiconductor shortage during the COVID-19 pandemic in 2020 and 2021 due to the collapse of supply chains, major advanced nations are determined not to repeat such mistakes when it comes to next-generation semiconductor supply chain development.

These semiconductors are also capable of operating under extreme environments, making them widely used in defense applications. As such, they are considered true "security assets."

According to a recent Q1 global GaN patent monitor report by market research firm KnowMade, the companies with the highest number of published and registered patents in the power GaN semiconductor sector were China’s Sirius Semiconductor and Japan’s Mitsubishi Electric, each with 14 patents.

Patent processes go through application, publication, and registration, with the publication stage already granting legal effect. The data mentioned includes patents from the point of publication, which holds legal weight.

Following them were China’s Innoscience (13 patents), Germany’s Infineon (10 patents), and companies like Texas Instruments (U.S.), Core Energy (China), ROHM (Japan), and Xidian University (China), each with 9 patents.

Taiwan’s VIS (7 patents), Japan’s Toshiba, and GM (U.S.) with 6 patents each were also named as key developers in the power GaN semiconductor sector.

In the communications (RF) GaN semiconductor field, Intel (U.S.) stood out with 11 published and registered patents in Q1. Xidian University (China, 9), CETC (China, 8), Wolfspeed (U.S., 5), and Sony (Japan, 3) also showed strong patent activity.

In comparison, South Korean companies and institutions were far behind, with Samsung Electronics, Soongsil University, and the Korea Photonics Technology Institute each registering only one patent, just three in total. In terms of published patents, Samsung Electronics, Amosense, Semipowerex, Entrium, and the Korea Advanced Nano Fab Center have had one each, and WaveLord have had two. Samsung and WaveLord are the only two companies that have both registered and published patents, a significantly lower number compared to global competitors.

GaN devices are characterized by high efficiency and power density, making them widely used in power amplifiers for 5G and LTE base stations. They are expected to play a key role in the upcoming 6G era. In the fast-approaching age of electric vehicles, next-generation semiconductors such as GaN and SiC hold immense market potential.

Market research firm Yole Developpement predicts that the power GaN semiconductor market will grow explosively at a CAGR of 59% through 2027. The RF GaN semiconductor market, used in communications and radar, is also expected to grow at an annual rate of over 12% through 2028.

Experts emphasize that beyond market potential, these semiconductors are also crucial for defense industries, civilian radar systems, and satellite communications.

Professor Yang Young-gu of Sungkyunkwan University stated, "Sectors such as communication infrastructure and radar not only have sizable markets, but are also directly linked to national security, making their importance even more significant."

Recognizing this early on, leading countries around the world designated GaN semiconductors as strategic core technologies in the early 2000s and have been heavily investing in them.

These technologies have since come under strict national-level management. One notable case was in 2017, when Germany’s Infineon attempted to acquire U.S.-based GaN company Wolfspeed, but the U.S. government blocked the deal, citing potential national security threats.

More recently, U.S. company EPC filed a patent infringement lawsuit with the U.S. International Trade Commission (ITC) against China’s Innoscience. This marks the beginning of a patent war over next-generation semiconductors amid the ongoing tech supremacy battle between the U.S. and China.

The U.S. and Japan have already begun cooperating on supply chain strategies. Japan’s Renesas signed a 10-year supply agreement for SiC wafers with U.S.-based Wolfspeed. Renesas, formed by the semiconductor divisions of Mitsubishi Electric, Hitachi, and NEC, plans to begin mass-producing SiC power semiconductors in 2025.

Currently, South Korea is entirely dependent on imports for GaN and SiC semiconductors used in its defense industry. Kim Hyun-je, Executive VP of Wavevis, which operates Korea’s only RF GaN semiconductor fab, noted, “Even in the U.S., where market economy is prioritized, the government directly intervenes and supports GaN semiconductors due to their link to national security.”

Source: Maeil Business Newspaper(https://www.mk.co.kr/news/business/10802020 )